METHOD FOR SELECTIVELY REMOVING PREDETERMINED PART OF SELECTED ELEMENT IN SEMICONDUCTOR STRUCTURE

A method for treating a semiconductor structure includes: disposing the semiconductor structure in a chamber; introducing a modifying agent into the chamber to modify a surface part of a dielectric element; and introducing a removing agent into the chamber while applying an electromagnetic radiation...

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Bibliographic Details
Main Author YANG, Chansyun David
Format Patent
LanguageEnglish
Published 18.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for treating a semiconductor structure includes: disposing the semiconductor structure in a chamber; introducing a modifying agent into the chamber to modify a surface part of a dielectric element; and introducing a removing agent into the chamber while applying an electromagnetic radiation with a selected frequency to the chamber so as to permit the dielectric element to be selectively heated by the electromagnetic radiation to have a temperature higher than those of other elements of the semiconductor structure, and so as to permit the modified surface part of the dielectric element to be removed.
Bibliography:Application Number: US202217866059