HIGH-SPEED READOUT IMAGE SENSOR

• Main Authors: Yeh, Shang-Fu, Yaung, Dun-Nian, Hsu, Tzu-Hsuan, Wang, Chen-Jong, Wang, Tzu-Jui, Chung, Chi-Hsien
• Format: Patent
• Language: English
• Published: 11.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first chip bonded to a second chip. The first chip includes a semiconductor substrate. The first chip includes a first transistor cell and a second transistor cell. The second transistor cell is laterally spaced from the first transistor cell. A first through-substrate via (TSV) extends vertically through the semiconductor substrate. The first transistor cell is electrically coupled to the first TSV. A second TSV extends vertically through the first semiconductor substrate. The second transistor cell is electrically coupled to the second TSV. The second chip comprises a first readout circuit that is electrically coupled to the first TSV and the second TSV. The first readout circuit is disposed laterally between the first TSV and the second TSV. The first readout circuit is configured to receive a first signal from the first transistor cell.