INTEGRATED CIRCUIT WITH FEOL RESISTOR

A method includes forming a shallow trench isolation (STI) region in a semiconductor substrate thereby defining an active region and a passive region in the semiconductor substrate and spaced apart from each other by the STI region, forming a first sacrificial gate structure over the active region a...

Full description

Saved in:
Bibliographic Details
Main Authors HUANG, Tien-Chien, CHANG, Chih-Hsien, SHEEN, Ruey-Bin
Format Patent
LanguageEnglish
Published 14.12.2023
Subjects
Online AccessGet full text

Cover

Loading…