METHODS OF FORMING MICROELECTRONIC DEVICES
A microelectronic device may include a source structure and a stack structure. The stack structure may include a vertically alternating sequence of insulative structures and conductive structures. Filled slits may extend through the stack structure and into the source structure, the slits dividing t...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
30.11.2023
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A microelectronic device may include a source structure and a stack structure. The stack structure may include a vertically alternating sequence of insulative structures and conductive structures. Filled slits may extend through the stack structure and into the source structure, the slits dividing the stack structure into multiple blocks. Memory cell pillars may extend through the stack structure and into the source structure, the memory cell pillars and the filled slits terminated at substantially the same depth within the source structure as one another. |
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| AbstractList | A microelectronic device may include a source structure and a stack structure. The stack structure may include a vertically alternating sequence of insulative structures and conductive structures. Filled slits may extend through the stack structure and into the source structure, the slits dividing the stack structure into multiple blocks. Memory cell pillars may extend through the stack structure and into the source structure, the memory cell pillars and the filled slits terminated at substantially the same depth within the source structure as one another. |
| Author | Shepherdson, Justin D Carter, Chet E Howder, Collin |
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| Notes | Application Number: US202318359792 |
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| Snippet | A microelectronic device may include a source structure and a stack structure. The stack structure may include a vertically alternating sequence of insulative... |
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| SubjectTerms | ELECTRICITY |
| Title | METHODS OF FORMING MICROELECTRONIC DEVICES |
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