BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR
The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photod...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
30.11.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer. |
---|---|
AbstractList | The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer. |
Author | Wu, Cheng-Ta Tzeng, Kuo-Hwa Tu, Yeur-Luen |
Author_xml | – fullname: Wu, Cheng-Ta – fullname: Tu, Yeur-Luen – fullname: Tzeng, Kuo-Hwa |
BookMark | eNrjYmDJy89L5WSwcnJ09tYN9nRxVXBxdQ1QCAly9XP2UPAM9vdxDPH091MIDgkKdQ4JDXJVcPMPUvD0dXR3VQh29Qv2D-JhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsbGFuaG5gaOhsbEqQIAWEAroQ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US2023387170A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2023387170A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:57:42 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2023387170A13 |
Notes | Application Number: US202318364682 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231130&DB=EPODOC&CC=US&NR=2023387170A1 |
ParticipantIDs | epo_espacenet_US2023387170A1 |
PublicationCentury | 2000 |
PublicationDate | 20231130 |
PublicationDateYYYYMMDD | 2023-11-30 |
PublicationDate_xml | – month: 11 year: 2023 text: 20231130 day: 30 |
PublicationDecade | 2020 |
PublicationYear | 2023 |
RelatedCompanies | Taiwan Semiconductor Manufacturing Company, Ltd |
RelatedCompanies_xml | – name: Taiwan Semiconductor Manufacturing Company, Ltd |
Score | 3.512856 |
Snippet | The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231130&DB=EPODOC&locale=&CC=US&NR=2023387170A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-LHlIDSt2K3bJ0Vhqxp6qauHU0rextNl4Eg3XAV_32vcdM97S3JwZEE7uN3ubsA3GYzmlHlSLOpEK62bGmjzFHHTBtqatOp1VA63jEM7H7Seh63xxX4WNfC6D6h37o5IkpUhvJeaH29-A9ieTq3cnkn33Fp_ujHXc9YoWN0VlAnG57b5aPQC5nBWDcRRhBpGkVw0LF6iJV20JHulAlg_M0t61IWm0bFP4TdEfLLiyOoqLwG-2z991oN9oarJ28crqRveQwPbo-9mGLgceJxPiJxxAPWJwMRvupIExFxlLAyj4EgtiODYe-JE8EDEUYncOPzmPVN3MTk78yTRGzumJ5CNZ_n6gzIrKOsjNJUNhAJpE1bWtl92eLFsWTqOOn0HOrbOF1sJ1_CQTn97W1Yh2rx-aWu0OoW8lpf1g9xPX-P |
link.rule.ids | 230,309,783,888,25578,76886 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fS8MwED7GFOebTsUfUwNK34rdMrtVGLKlma1b29EfsrfSdhkI0g1X8d_3Gjfd095CDkIS-C75LndfAO6zOc2oMFK1JZCutvVUR8xRQ02aYqbTmdYUMt7huLoVtV-nj9MKfGxqYaRO6LcUR0REZYj3Qvrr5X8Qy5S5lauH9B27Fs_DsGcqa3aMlxX0yYo56PGJZ3pMYawXBYrrSxtFctDR-siV9vCS3S3xwN8GZV3KcvtQGR7B_gTHy4tjqIi8DjW2-XutDgfO-skbm2v0rU7gadBnIzWwTU5Mzick9LnLLGIH3lhGmkgQ-hEr8xgIcjtiO_0XTgLuBp5_CndDHjJLxUnEf2uOo2B7xvQMqvkiF-dA5h2hZZQmaROZQNLSUy3rlhIvhpYmhpHMLqCxa6TL3eZbqFmhM47Htju6gsPS9Ktz2IBq8fklrvEELtIbuXE_l1-CgQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=BACK-SIDE+DEEP+TRENCH+ISOLATION+STRUCTURE+FOR+IMAGE+SENSOR&rft.inventor=Wu%2C+Cheng-Ta&rft.inventor=Tu%2C+Yeur-Luen&rft.inventor=Tzeng%2C+Kuo-Hwa&rft.date=2023-11-30&rft.externalDBID=A1&rft.externalDocID=US2023387170A1 |