TRANSISTOR WITH DIELECTRIC SPACERS AND FIELD PLATE AND METHOD OF FABRICATION THEREFOR
A transistor device includes a semiconductor substrate and a gate structure formed over the substrate. Forming the gate structure may include steps of forming a multi-layer dielectric stack over the substrate, performing an anisotropic dry etch of the multi-layer dielectric stack to form a gate chan...
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Main Author | |
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Format | Patent |
Language | English |
Published |
09.11.2023
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Subjects | |
Online Access | Get full text |
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