TRANSISTOR WITH DIELECTRIC SPACERS AND FIELD PLATE AND METHOD OF FABRICATION THEREFOR

A transistor device includes a semiconductor substrate and a gate structure formed over the substrate. Forming the gate structure may include steps of forming a multi-layer dielectric stack over the substrate, performing an anisotropic dry etch of the multi-layer dielectric stack to form a gate chan...

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Bibliographic Details
Main Author Hill, Darrell Glenn
Format Patent
LanguageEnglish
Published 09.11.2023
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