CIRCUIT STRUCTURE AND RELATED METHOD FOR RADIATION RESISTANT MEMORY CELL

Embodiments of the disclosure provide a circuit structure and related method to provide a radiation resistant memory cell. A circuit structure may include a first latch having an input node and an output node. A second latch has an input node and an output node, in which the output node of the secon...

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Bibliographic Details
Main Authors Dharne, Shivraj Gurpadappa, Raj, Vivek, Rashed, Mahbub
Format Patent
LanguageEnglish
Published 12.10.2023
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
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Summary:Embodiments of the disclosure provide a circuit structure and related method to provide a radiation resistant memory cell. A circuit structure may include a first latch having an input node and an output node. A second latch has an input node and an output node, in which the output node of the second latch is coupled to the input node of the first latch, and the input node of the second latch is coupled to the output node of the first latch. A read/write (R/W) circuit includes a plurality of transistors coupling a word line, a bit line, and an inverted bit line to at least two outputs. One of the at least two outputs is coupled to the input node of the first latch and another of the outputs is coupled to the input node of the second latch.
Bibliography:Application Number: US202217658189