SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THEREOF

Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectri...

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Main Authors PARK, YOUNG-LIM, KANG, SANG YEOL, SEO, JONG-BOM, AHN, SE HYOUNG, AN, CHANG MU
Format Patent
LanguageEnglish
Published 14.09.2023
Subjects
ELECTRICITY
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Abstract Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
AbstractList Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
Author KANG, SANG YEOL
AN, CHANG MU
SEO, JONG-BOM
AHN, SE HYOUNG
PARK, YOUNG-LIM
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Snippet Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner...
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SubjectTerms ELECTRICITY
Title SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THEREOF
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