SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

• Main Authors: YEH, Te-Fu, CHEN, Yen-Ju, WU, Yun-Chen, LIN, Yen-Ta, CHAN, Yung-Hsiang, SUN, Chih-Ming, CHEN, Hui-Chi, HUNG, Jo-Chun, YANG, Wen-Yao, CHEN, Chia-Wei, HSU, Wei-Cheng
• Format: Patent
• Language: English
• Published: 14.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a semiconductor device structure includes forming first nanostructures and second nanostructures over a substrate. The method also includes forming a first metal gate layer surrounding the first nanostructures and over the first nanostructures and the second nanostructures. The method also includes etching back the first metal gate layer over the first nanostructures and the second nanostructures. The method also includes removing the first metal gate layer over the second nanostructures. The method also includes forming a second metal gate layer surrounding the second nanostructures and over the first nanostructures and the second nanostructures.