MEMORY CIRCUIT AND WORD LINE DRIVER
The present disclosure provides a memory circuit. The memory circuit includes: a plurality of word lines, a word line driver, and a first conductive line. The word line driver is electrically connected to the word lines. The word line driver includes: a plurality of first electronic components and a...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
17.08.2023
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present disclosure provides a memory circuit. The memory circuit includes: a plurality of word lines, a word line driver, and a first conductive line. The word line driver is electrically connected to the word lines. The word line driver includes: a plurality of first electronic components and a plurality of second electronic components. The plurality of first electronic components each electrically connected to the corresponding word line. The plurality of second electronic components each having a first terminal and a second terminal. The first terminal is electrically connected to the corresponding word line and the corresponding first electronic component. The first conductive line is electrically connected to the second terminal of the second electronic components. The first conductive line has a length proportional to the number of the word lines. |
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| AbstractList | The present disclosure provides a memory circuit. The memory circuit includes: a plurality of word lines, a word line driver, and a first conductive line. The word line driver is electrically connected to the word lines. The word line driver includes: a plurality of first electronic components and a plurality of second electronic components. The plurality of first electronic components each electrically connected to the corresponding word line. The plurality of second electronic components each having a first terminal and a second terminal. The first terminal is electrically connected to the corresponding word line and the corresponding first electronic component. The first conductive line is electrically connected to the second terminal of the second electronic components. The first conductive line has a length proportional to the number of the word lines. |
| Author | CHANG, ZHI-HAO HSIEH, WEI-JER |
| Author_xml | – fullname: CHANG, ZHI-HAO – fullname: HSIEH, WEI-JER |
| BookMark | eNrjYmDJy89L5WRQ9nX19Q-KVHD2DHIO9QxRcPRzUQj3D3JR8PH0c1VwCfIMcw3iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGRmYGpuaGjobGxKkCAMGiJUM |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences Physics |
| ExternalDocumentID | US2023260571A1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US2023260571A13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Oct 18 06:06:09 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US2023260571A13 |
| Notes | Application Number: US202217674139 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230817&DB=EPODOC&CC=US&NR=2023260571A1 |
| ParticipantIDs | epo_espacenet_US2023260571A1 |
| PublicationCentury | 2000 |
| PublicationDate | 20230817 |
| PublicationDateYYYYMMDD | 2023-08-17 |
| PublicationDate_xml | – month: 08 year: 2023 text: 20230817 day: 17 |
| PublicationDecade | 2020 |
| PublicationYear | 2023 |
| RelatedCompanies | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD |
| RelatedCompanies_xml | – name: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD |
| Score | 3.4810262 |
| Snippet | The present disclosure provides a memory circuit. The memory circuit includes: a plurality of word lines, a word line driver, and a first conductive line. The... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | INFORMATION STORAGE PHYSICS STATIC STORES |
| Title | MEMORY CIRCUIT AND WORD LINE DRIVER |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230817&DB=EPODOC&locale=&CC=US&NR=2023260571A1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3da8IwED_Efb5tbmMfbgQcfZNRrI19KEOTFjvWKtU69yRt2sJgVFk79u_vEurmk29JDi4fcPndL7lLAB7lbqinWQ9pSU67iMe0GwssxVaa93umNchimTvsB-Y4Ml6W_WUDPre5MOqd0B_1OCJalEB7r9R-vfk_xOIqtrJ8Sj6waf3szm2u1ewY_emBTjU-sp3phE-YxpgdzbQgVDLpulN9iFzpAB1pKgPAnMVI5qVsdkHFPYPDKeorqnNoZEULTtj277UWHPv1lXcLjlSMpiixsbbD8gI6vuNPwnfCvJBF3pwMA07ekM6RVy9wCA-9hRNeQsd15mzcxX5Xf9NcRbPdQfauoFmsi-waiCXSlJpGYgn01fJcIMIauhgkCYJxnBv0Btr7NN3uF9_BqazKc1KdtqFZfX1n9wi0VfKg1ucXS4p8fw |
| link.rule.ids | 230,309,783,888,25578,76884 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3da8IwED_Efbi3zW3sw20FR99klNamfZChScVutkptnXsqbdrCYFSZHfv3dwm6-eRbuIPkErj73V1yF4BHYQ21LNcxLClIB_GYdBKOo8TOiq5u2laeiNphzzdHkfGy6C5q8LmthZF9Qn9kc0TUKI76Xkl7vfpPYjH5tnL9lH4gafk8DHtM3UTH6E9bGlHZoOdMJ2xCVUp70Uz1A8kTrjvR-hgrHaCTbYlO-858IOpSVrugMjyFwynOV1ZnUMvLJjTo9u-1Jhx7myvvJhzJN5p8jcSNHq7Poe053iR4V6gb0MgNlb7PlDcM55Sx6zsKC9y5E1xAe-iEdNTBdeO_bcbRbFdI_RLq5bLMr0CxeZYR00htjr5aUXBEWEPjVpoiGCeFQa6htW-mm_3sB2iMQm8co4Cvt3AiWCJnqpEW1Kuv7_wOQbdK7-VZ_QJJmn9v |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=MEMORY+CIRCUIT+AND+WORD+LINE+DRIVER&rft.inventor=CHANG%2C+ZHI-HAO&rft.inventor=HSIEH%2C+WEI-JER&rft.date=2023-08-17&rft.externalDBID=A1&rft.externalDocID=US2023260571A1 |