METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIAL AND SURFACE ACOUSTIC WAVE DEVICE USING SUCH A LAYER

A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nuc...

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Bibliographic Details
Main Authors DUPONT, Florian, RODRIGUEZ, Guillaume, SAUZE, Laura
Format Patent
LanguageEnglish
Published 08.06.2023
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRONIC CIRCUITRY
CHEMISTRY
CRYSTAL GROWTH
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
RESONATORS
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.
Bibliography:Application Number: US202218061774