BEOL INTERCONNECT SUBTRACTIVE ETCH SUPER VIA

• Main Authors: Clevenger, Lawrence A, Rizzolo, Michael, Bhosale, Prasad, Lanzillo, Nicholas Anthony
• Format: Patent
• Language: English
• Published: 08.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Semiconductor devices including a super via connection between levels are provided. The semiconductor device can include a first interlevel dielectric layer, a back-end-of-line (BEOL) interconnect structure disposed in the first interlevel dielectric layer, a second interlevel dielectric layer disposed on a first portion of the first interlevel dielectric layer, a third interlevel dielectric layer disposed on the second interlevel dielectric layer, and a super via disposed on a second portion of the first interlevel dielectric layer, wherein a first end of the super via is connected to the BEOL interconnect structures and wherein a second end of the super via opposite the first end of the super via is a distance from the first interlevel dielectric layer larger than a height distance of the second interlevel dielectric layer.