METHOD FOR INDUCING CONDUCTIVITY AT AND NEAR OXIDE INTERFACES
A process of preparing a conductive oxide interface is described herein, comprising contacting a surface of a first oxide with a plasma of a reducing gas to obtain a treated surface, and depositing a second oxide on the treated surface, thereby obtaining a conductive oxide interface between the firs...
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Format | Patent |
Language | English |
Published |
04.05.2023
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Abstract | A process of preparing a conductive oxide interface is described herein, comprising contacting a surface of a first oxide with a plasma of a reducing gas to obtain a treated surface, and depositing a second oxide on the treated surface, thereby obtaining a conductive oxide interface between the first oxide and the second oxide. Further described herein are composites and articles of manufacture comprising same, the composites comprising a first oxide and second oxide, and an interface between the first oxide and second oxide which comprises a conductive oxide interface, wherein the conductive oxide interface comprises nitrogen atoms and/or the second oxide is in an amorphous form and the conductive oxide interface is characterized by a sheet resistance of no more than 105 omega/square. |
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AbstractList | A process of preparing a conductive oxide interface is described herein, comprising contacting a surface of a first oxide with a plasma of a reducing gas to obtain a treated surface, and depositing a second oxide on the treated surface, thereby obtaining a conductive oxide interface between the first oxide and the second oxide. Further described herein are composites and articles of manufacture comprising same, the composites comprising a first oxide and second oxide, and an interface between the first oxide and second oxide which comprises a conductive oxide interface, wherein the conductive oxide interface comprises nitrogen atoms and/or the second oxide is in an amorphous form and the conductive oxide interface is characterized by a sheet resistance of no more than 105 omega/square. |
Author | COHEN AZARZAR, Dana LI, Yang BASKIN, Maria KORNBLUM, Lior |
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Snippet | A process of preparing a conductive oxide interface is described herein, comprising contacting a surface of a first oxide with a plasma of a reducing gas to... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | METHOD FOR INDUCING CONDUCTIVITY AT AND NEAR OXIDE INTERFACES |
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