COPPER-BASED ALLOY SPUTTERING TARGET AND METHOD FOR MAKING THE SAME

• Main Authors: HSIEH, Tsung-Hsien, LIN, Shou-Hsien, YE, Yu-An
• Format: Patent
• Language: English
• Published: 16.03.2023
• Subjects: ALLOYS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

A copper-based alloy sputtering target includes copper and a metal element selected from manganese, chromium, cobalt, aluminum, tin, titanium, and combinations thereof. Based on a total weight of the copper-based alloy sputtering target, copper is present in an amount of not less than 98 wt %, and the metal element is present in an amount ranging from 0.3 wt % to 2.0 wt %. The copper-based alloy sputtering target has an average value of Kernel Average Misorientation of not greater than 2° as determined by Electron Backscatter Diffraction, and an average value of Vickers hardness on a sputtering surface that ranges from 90 Hv to 120 Hv. A method for making the copper-based alloy sputtering target is also disclosed.