CHAMBERS AND COATINGS FOR REDUCING BACKSIDE DAMAGE

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the s...

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Main Authors Firouzdor, Vahid, Tedeschi, Leonard M, Schwarz, Benjamin CE, Banda, Sumanth, Wang, Changgong, Ramaswamy, Kartik, Kou, Teng-Fang
Format Patent
LanguageEnglish
Published 16.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.
Bibliography:Application Number: US202117473821