BARRIER LAYER FOR AN INTERCONNECT STRUCTURE

• Main Authors: CHOU, Chih-Shiun, CHANG, Chih-Wei, CHANG, Chien, TSAI, Ming-Hsing, LIN, Kan-Ju, WANG, Yu-Shiuan, HUANG, Hung-Yi, LIAO, Yu-Hsiang, CHANG, Tai Min, HUNG, Min-Hsiu
• Format: Patent
• Language: English
• Published: 12.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. The barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. The barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. This enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.