TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES

• Main Authors: TSAI, Chia-Ming, SAVANT, Chandrashekhar Prakash, FAN, Yuh-Ta, YU, Tien-Wei
• Format: Patent
• Language: English
• Published: 05.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure describes a semiconductor device having metal boundary trench isolation with electrically conductive intermediate structures acting as a metal diffusion barrier. The semiconductor structure includes a first fin structure and a second fin structure on a substrate, an insulating...