INTEGRATED CIRCUIT STRUCTURES HAVING PLUGGED METAL GATES

• Main Authors: HASAN, Mohammad, PATEL, Reken, PURSEL, Sean, GUHA, Biswajeet, HARAN, Mohit K, JAFFE, Jake, GHANI, Tahir
• Format: Patent
• Language: English
• Published: 22.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Integrated circuit structures having plugged metal gates, and methods of fabricating integrated circuit structures having plugged metal gates, are described. For example, an integrated circuit structure includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin, the dielectric gate plug on the STI structure. The gate dielectric material layer and the conductive gate layer are along a side of the dielectric gate plug, and the gate dielectric material layer is in direct contact with an entirety of the side of the dielectric gate plug.