ORGANOMETALLIC RADIATION PATTERNABLE COATINGS WITH LOW DEFECTIVITY AND CORRESPONDING METHODS

• Main Authors: Gates, Craig M, Giordano, Gaetano, Chang, Shu-Hao L, Geniza, Mark, de Schepper, Peter, Smiddy, Dominick, Clark, Benjamin L, Doise, Jan
• Format: Patent
• Language: English
• Published: 25.08.2022
• Subjects: ADHESIVES; APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMICAL PAINT OR INK REMOVERS; CHEMISTRY; CINEMATOGRAPHY; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; CORRECTING FLUIDS; DYES; ELECTROGRAPHY; FILLING PASTES; HOLOGRAPHY; INKS; MATERIALS THEREFOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORIGINALS THEREFOR; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; POLISHES; USE OF MATERIALS THEREFOR; WOODSTAINS

In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.