MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

• Main Authors: CHEN, Jun-Yao, LIAO, Chun-Heng, WANG, Hung Cho
• Format: Patent
• Language: English
• Published: 18.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is ar...