MAGNETIC MEMORY DEVICES

• Main Authors: Oh, Sechung, Seo, Hyeonwoo, Kim, Jaehoon, Park, Sanghwan, Cho, Hyun, Park, Yongsung
• Format: Patent
• Language: English
• Published: 19.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, whe...