MEMORY CELL AND METHODS THEREOF

• Main Authors: Ocker, Johannes, Polakowski, Patrick, Müller, Stefan Ferdinand
• Format: Patent
• Language: English
• Published: 21.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to various aspects, a memory cell is provided, the memory cell including: a capacitive memory structure including a first electrode; a field-effect transistor structure including a gate electrode; one or more insulator layers, one or more source/drain contact structures embedded in the one or more insulator layers to electrically contact the field-effect transistor structure, and a connection structure embedded in at least one of the one or more insulator layers, wherein the connection structure electrically conductively connects the first electrode of the capacitive memory structure and the gate electrode of the field-effect transistor structure with one another and is electrically floating, and one or more additional electrically insulating structures configured to prevent a leakage current-induced charging of the first electrode, the gate electrode, and the connection structure.