Memory Cell Including Programmable Resistors With Transistor Components

• Main Authors: Lin, Chrong Jung, Chen, Maybe, Yu, Hsin-Yuan, Lin, Wen Zhang, Chang, Jonathan Tsung-Yung, Chih, Yu-Der, Chen, Yun-Sheng, King, Ya-Chin
• Format: Patent
• Language: English
• Published: 03.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set...