RESISTIVE MEMORY DEVICES

• Main Authors: YU, Seunggeun, LEE, Jabin, KIM, Chungman, CHOI, Soyeon, Lee, Jinwoo, WU, Zhe, CHOI, Dongsung
• Format: Patent
• Language: English
• Published: 17.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A resistive memory device includes a first conductive line extending in a first horizontal direction on a substrate, a plurality of second conductive lines separated from the first conductive line in a vertical direction and extending in a second horizontal direction intersecting with the first horizontal direction, on the substrate, a plurality of memory cells respectively connected between the first conductive line and one second conductive line selected from among the plurality of second conductive lines at a plurality of intersection points between the first conductive line and the plurality of second conductive lines, each of the plurality of memory cells including a selection device and a resistive memory pattern, and a bottom electrode shared by the plurality of memory cells, the bottom electrode having a variable thickness in the first horizontal direction, and including a top surface having a concave-convex shape.