COMPOSITION FOR REMOVING RUTHENIUM

The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 o...

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Main Authors OHWADA, Takuo, KASHIWAGI, Itsuki
Format Patent
LanguageEnglish
Published 06.01.2022
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Abstract The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.
AbstractList The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.
Author OHWADA, Takuo
KASHIWAGI, Itsuki
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Snippet The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be...
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SourceType Open Access Repository
SubjectTerms CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
Title COMPOSITION FOR REMOVING RUTHENIUM
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