Flip-Chip LED Structure and Fabrication Method

A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the seco...

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Bibliographic Details
Main Authors LIN, Xiaoxiong, HE, Anhe, ZHENG, Jiansen, HSU, Chen-ke, PENG, Kangwei, LIN, Su-hui
Format Patent
LanguageEnglish
Published 09.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.
Bibliography:Application Number: US202117445691