ELECTRON MIGRATION CONTROL IN INTERCONNECT STRUCTURES

A method for improving reliability of interconnect structures for semiconductor devices is disclosed. The method includes forming a contact structure on a transistor and forming a metallization layer on the contact structure. The forming the metallization layer includes depositing an inter-metal die...

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Bibliographic Details
Main Authors Hsu, Kai-Shiung, CHEN, Chun-Jen, Lin, Jyh-nan, Liu, Ding-I
Format Patent
LanguageEnglish
Published 29.07.2021
Subjects
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