ELECTRON MIGRATION CONTROL IN INTERCONNECT STRUCTURES
A method for improving reliability of interconnect structures for semiconductor devices is disclosed. The method includes forming a contact structure on a transistor and forming a metallization layer on the contact structure. The forming the metallization layer includes depositing an inter-metal die...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
29.07.2021
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Subjects | |
Online Access | Get full text |
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