IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

A method includes at least the following steps. A material layer is formed over an image capture chip. A patterned mask layer is formed on the material layer, wherein a pattern density of the patterned mask layer varies from a central region of the patterned mask layer to a periphery region of the p...

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Bibliographic Details
Main Author Chen, Chia-Chan
Format Patent
LanguageEnglish
Published 15.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes at least the following steps. A material layer is formed over an image capture chip. A patterned mask layer is formed on the material layer, wherein a pattern density of the patterned mask layer varies from a central region of the patterned mask layer to a periphery region of the patterned mask layer. The material layer is polished by using the patterned mask layer as a mask to form a lens layer including a single lens portion on the image capture chip.
Bibliography:Application Number: US202016742930