SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

A semiconductor device includes: a device layer including first and second active patterns, extending in a first direction on a substrate and adjacent to each other, and a plurality of gate electrodes extending in a second direction, intersecting the first direction, on the substrate and crossing th...

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Bibliographic Details
Main Authors BAEK, SANGHOON, LEE, SEUNGYOUNG
Format Patent
LanguageEnglish
Published 08.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes: a device layer including first and second active patterns, extending in a first direction on a substrate and adjacent to each other, and a plurality of gate electrodes extending in a second direction, intersecting the first direction, on the substrate and crossing the first and second active patterns; a lower wiring layer on the device layer, and including first and second lower wiring patterns extending in the first direction, located on the first and second active patterns, respectively, and connected to the plurality of gate electrodes; and an upper wiring layer on the lower wiring layer, and having first and second upper vias on the first and second lower wiring patterns, respectively, and first and second upper wiring patterns extending in the second direction. The first upper wiring pattern is connected to the first upper via without being connected to the second upper via and the second upper wiring pattern is connected to the second upper via without being connected to the first upper via.
Bibliography:Application Number: US202016946491