OPTICAL SEMICONDUCTOR ELEMENT

According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emittin...

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Main Authors IWAMOTO, Masanobu, Isomoto, Kenji, Sugawara, Hideto
Format Patent
LanguageEnglish
Published 04.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Abstract According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emitting layer. A pair of a first layer and a second layer is periodically stacked in the distributed Bragg reflector. The first layer includes AlxGa1-xAs. The second layer includes Inz(AlyGa1-y)1-zP. A refractive index n1 of the first layer is higher than a refractive index n2 of the second layer. The first layer has a thickness larger than λ0/(4n1) where λ0 is a center wavelength of a band on wavelength distribution of a reflectivity of the distributed Bragg reflector. The second layer has a thickness smaller than λ0/(4n2).
AbstractList According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emitting layer. A pair of a first layer and a second layer is periodically stacked in the distributed Bragg reflector. The first layer includes AlxGa1-xAs. The second layer includes Inz(AlyGa1-y)1-zP. A refractive index n1 of the first layer is higher than a refractive index n2 of the second layer. The first layer has a thickness larger than λ0/(4n1) where λ0 is a center wavelength of a band on wavelength distribution of a reflectivity of the distributed Bragg reflector. The second layer has a thickness smaller than λ0/(4n2).
Author Sugawara, Hideto
Isomoto, Kenji
IWAMOTO, Masanobu
Author_xml – fullname: IWAMOTO, Masanobu
– fullname: Isomoto, Kenji
– fullname: Sugawara, Hideto
BookMark eNrjYmDJy89L5WSQ9Q8I8XR29FEIdvX1dPb3cwl1DvEPUnD1cfV19QvhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkaGBmZmFhYWjobGxKkCAAcTI_0
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2021066888A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2021066888A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:58:02 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2021066888A13
Notes Application Number: US202016789639
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210304&DB=EPODOC&CC=US&NR=2021066888A1
ParticipantIDs epo_espacenet_US2021066888A1
PublicationCentury 2000
PublicationDate 20210304
PublicationDateYYYYMMDD 2021-03-04
PublicationDate_xml – month: 03
  year: 2021
  text: 20210304
  day: 04
PublicationDecade 2020
PublicationYear 2021
RelatedCompanies TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
KABUSHIKI KAISHA TOSHIBA
RelatedCompanies_xml – name: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
– name: KABUSHIKI KAISHA TOSHIBA
Score 3.3162398
Snippet According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Title OPTICAL SEMICONDUCTOR ELEMENT
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210304&DB=EPODOC&locale=&CC=US&NR=2021066888A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSbNIArWMQaVfmqWuSbJlkm5SsqWlrrlpWlpKaooFsM4En_bpZ-YRauIVYRrBxJAD2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1KC9YyPQpVkmai5Otq4B_i7-zmrOzrahwWp-QRA5MzNgf88R2FdiBTakzUH5wTXMCbQvpQC5UnETZGALAJqXVyLEwJSaJ8zA6Qy7e02YgcMXOuUNZEJzX7EIg6x_QAjo-AKFYFDg-fu5hDqH-AcpuPqAT-QXZVB2cw1x9tAF2hMP91Z8aDCyo4zFGFiAHf5UCQaFRDMLYKWbaJGUap4KugnDwsLMMNHA0sAs0TLJEMiRZJDBZ5IUfmlpBi4QF7yOykSGgaWkqDRVFlixliTJgcMDAGNmd2o
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSbNIArWMQaVfmqWuSbJlkm5SsqWlrrlpWlpKaooFsM4En_bpZ-YRauIVYRrBxJAD2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1KC9YyPQpVkmai5Otq4B_i7-zmrOzrahwWp-QRA5MzNgf88R2FdiBTayzUH5wTXMCbQvpQC5UnETZGALAJqXVyLEwJSaJ8zA6Qy7e02YgcMXOuUNZEJzX7EIg6x_QAjo-AKFYFDg-fu5hDqH-AcpuPqAT-QXZVB2cw1x9tAF2hMP91Z8aDCyo4zFGFiAHf5UCQaFRDMLYKWbaJGUap4KugnDwsLMMNHA0sAs0TLJEMiRZJDBZ5IUfml5Bk6PEF-feB9PP29pBi6QFHhNlYkMA0tJUWmqLLCSLUmSA4cNACgGel0
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=OPTICAL+SEMICONDUCTOR+ELEMENT&rft.inventor=IWAMOTO%2C+Masanobu&rft.inventor=Isomoto%2C+Kenji&rft.inventor=Sugawara%2C+Hideto&rft.date=2021-03-04&rft.externalDBID=A1&rft.externalDocID=US2021066888A1