OPTICAL SEMICONDUCTOR ELEMENT
According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emittin...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
04.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emitting layer. A pair of a first layer and a second layer is periodically stacked in the distributed Bragg reflector. The first layer includes AlxGa1-xAs. The second layer includes Inz(AlyGa1-y)1-zP. A refractive index n1 of the first layer is higher than a refractive index n2 of the second layer. The first layer has a thickness larger than λ0/(4n1) where λ0 is a center wavelength of a band on wavelength distribution of a reflectivity of the distributed Bragg reflector. The second layer has a thickness smaller than λ0/(4n2). |
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Bibliography: | Application Number: US202016789639 |