Method of Manufacturing a Semiconductor Device and Semiconductor Device
A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
14.01.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer. |
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Bibliography: | Application Number: US202016925523 |