BOTTOM ELECTRODE STRUCTURE AND METHOD OF FORMING THE SAME

A void-less bottom electrode structure is formed at least partially in a via opening having a small feature size and containing a conductive landing pad structure which is composed of a metal-containing seed layer that is subjected to a reflow anneal. A metal-containing structure is located on a top...

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Bibliographic Details
Main Authors Yang, Chih-Chao, Kim, Andrew Tae, Li, Baozhen
Format Patent
LanguageEnglish
Published 10.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A void-less bottom electrode structure is formed at least partially in a via opening having a small feature size and containing a conductive landing pad structure which is composed of a metal-containing seed layer that is subjected to a reflow anneal. A metal-containing structure is located on a topmost surface of the bottom electrode structure. The metal-containing structure may be composed of an electrically conductive metal-containing material or a material stack of electrically conductive metal-containing materials. In some embodiments, the bottom electrode and the metal-containing structure collectively provide a non-volatile memory device.
Bibliography:Application Number: US201916436308