METHOD OF MODELING A MASK BY TAKING INTO ACCOUNT OF MASK PATTERN EDGE INTERACTION
A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
17.09.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model. |
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Bibliography: | Application Number: US202016889537 |