Semiconductor Device Having a Copper Pillar Interconnect Structure

A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is for...

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Main Authors Marbella, Carlo, Chan, Swee Guan, Cho, Eung San, Oratti Kalandar, Navas Khan
Format Patent
LanguageEnglish
Published 13.08.2020
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Abstract A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.
AbstractList A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.
Author Cho, Eung San
Marbella, Carlo
Chan, Swee Guan
Oratti Kalandar, Navas Khan
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Snippet A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor Device Having a Copper Pillar Interconnect Structure
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