Semiconductor Device Having a Copper Pillar Interconnect Structure
A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is for...
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Format | Patent |
Language | English |
Published |
13.08.2020
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Abstract | A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer. |
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AbstractList | A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer. |
Author | Cho, Eung San Marbella, Carlo Chan, Swee Guan Oratti Kalandar, Navas Khan |
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Snippet | A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor Device Having a Copper Pillar Interconnect Structure |
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