SEMICONDUCTOR DEVICE

Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOS...

Full description

Saved in:
Bibliographic Details
Main Authors CHO, SUNGWE, LEE, KEUNHO, KIM, HA-YOUNG, SEO, JAE-WOO, SHIN, JUNGHWAN, PARK, KI-MAN
Format Patent
LanguageEnglish
Published 21.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOSFET region. The first to third gate electrodes extend in the first direction and are sequentially arranged in a second direction different from the first direction. The first and third gate electrodes are supplied with a first signal. The second gate electrode is supplied with a second signal that is an inverted signal of the first signal. The first gate electrode includes a first gate of the first region and a first gate of the second region. The first gates are aligned and connected with each other in the first direction.
Bibliography:Application Number: US201916669639