III-V CMOS CO-INTEGRATION

• Main Authors: Mo, Renee T, Lee, Ko-Tao, Cheng, Cheng-Wei, Tsai, HsinYu
• Format: Patent
• Language: English
• Published: 07.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of fabricating an n-type field effect transistor device (nFET) in a region of a wafer element is provided. The method includes forming a mandrel in the region and growing III-V semiconductor materials on the mandrel. The method also includes pulling the mandrel from a gate space in which a...