BI-POLAR WRITE SCHEME

• Main Authors: BOZDAG, Kadriye Deniz, LOUIE, Benjamin, BERGER, Neal
• Format: Patent
• Language: English
• Published: 06.02.2020
• Subjects: CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; INFORMATION STORAGE; PHYSICS; STATIC STORES

A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank and writing a second plurality of data words and associated memory addresses into an error buffer. The method also comprises monitoring a first counter value which tracks a number of write 1 errors and a second counter value which tracks a number of write 0 errors in the memory bank. Further, the method comprises determining if the first counter value and the second counter value have exceeded a predetermined threshold. Responsive to a determination that the first counter value has exceeded the predetermined threshold increasing a write 1 voltage of the memory bank, and, further, responsive to a determination that the second counter value has exceeded the predetermined threshold increasing a write 0 voltage of the memory bank.