BI-POLAR WRITE SCHEME
A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank and writing a second plurality of data words and associated memory addresses into an error buffer. The metho...
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Format | Patent |
Language | English |
Published |
06.02.2020
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Subjects | |
Online Access | Get full text |
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Abstract | A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank and writing a second plurality of data words and associated memory addresses into an error buffer. The method also comprises monitoring a first counter value which tracks a number of write 1 errors and a second counter value which tracks a number of write 0 errors in the memory bank. Further, the method comprises determining if the first counter value and the second counter value have exceeded a predetermined threshold. Responsive to a determination that the first counter value has exceeded the predetermined threshold increasing a write 1 voltage of the memory bank, and, further, responsive to a determination that the second counter value has exceeded the predetermined threshold increasing a write 0 voltage of the memory bank. |
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AbstractList | A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank and writing a second plurality of data words and associated memory addresses into an error buffer. The method also comprises monitoring a first counter value which tracks a number of write 1 errors and a second counter value which tracks a number of write 0 errors in the memory bank. Further, the method comprises determining if the first counter value and the second counter value have exceeded a predetermined threshold. Responsive to a determination that the first counter value has exceeded the predetermined threshold increasing a write 1 voltage of the memory bank, and, further, responsive to a determination that the second counter value has exceeded the predetermined threshold increasing a write 0 voltage of the memory bank. |
Author | BERGER, Neal LOUIE, Benjamin BOZDAG, Kadriye Deniz |
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Snippet | A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data... |
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SubjectTerms | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
Title | BI-POLAR WRITE SCHEME |
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