FORMATION METHOD OF DAMASCENE STRUCTURE

A method for forming a semiconductor device is provided. The method includes forming a first dielectric layer over a semiconductor substrate and forming a first conductive feature extending into the first dielectric layer. The first conductive feature has a planar top surface. The method also includ...

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Bibliographic Details
Main Authors PENG, Tai-Yen, Wu, Chia-Tien, CHENG, Jye-Yen
Format Patent
LanguageEnglish
Published 23.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a semiconductor device is provided. The method includes forming a first dielectric layer over a semiconductor substrate and forming a first conductive feature extending into the first dielectric layer. The first conductive feature has a planar top surface. The method also includes forming a second dielectric layer over the first conductive feature. The method further includes forming a hole in the second dielectric layer to expose the planar top surface of the first conductive feature. In addition, the method includes partially removing the first conductive feature from the planar top surface of the first conductive feature to form a curved surface of the first conductive feature. The method further includes forming a second conductive feature to fill the hole after the curved surface of the first conductive feature is formed.
Bibliography:Application Number: US201916585947