FORMING STACKED TWIN III-V NANO-SHEETS USING ASPECT-RATIO TRAPPING TECHNIQUES
A semiconductor structure that includes: a substrate, a twin vertical punch-through stopper layer structure connected to the substrate, and a plurality of nanosheets connected to and supported by the twin vertical punch-through stopper structure and isolated from the substrate by an insulating diele...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
13.06.2019
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Subjects | |
Online Access | Get full text |
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