METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns inclu...

Full description

Saved in:
Bibliographic Details
Main Authors SHEEN, Dong Sun, SHIM, Jung Myoung, KIM, Jong Gi, YANG, Young Ho, EOM, Hyeng Woo, KIM, Kyeong Bae, CHUNG, Woo Jae, CHOI, Won Joon, LEE, Kwang Wook, KO, Min Sung
Format Patent
LanguageEnglish
Published 14.03.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
Bibliography:Application Number: US201815961143