SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device comprises a first memory cell array including a first block and a second block, the first block including a first memory cell, and the second block including a second memory cell; and a controller that performs, in a first period of time in...
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Format | Patent |
Language | English |
Published |
14.03.2019
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Online Access | Get full text |
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Abstract | According to one embodiment, a semiconductor memory device comprises a first memory cell array including a first block and a second block, the first block including a first memory cell, and the second block including a second memory cell; and a controller that performs, in a first period of time in writing, a first program in the first memory cell and the second memory cell. |
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AbstractList | According to one embodiment, a semiconductor memory device comprises a first memory cell array including a first block and a second block, the first block including a first memory cell, and the second block including a second memory cell; and a controller that performs, in a first period of time in writing, a first program in the first memory cell and the second memory cell. |
Author | KASAI, Hayao |
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Notes | Application Number: US201815891351 |
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RelatedCompanies | TOSHIBA MEMORY CORPORATION |
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Snippet | According to one embodiment, a semiconductor memory device comprises a first memory cell array including a first block and a second block, the first block... |
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Title | SEMICONDUCTOR MEMORY DEVICE |
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