METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protect...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
20.12.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protective film, an impurity is ion implanted into the semiconductor substrate. Thereafter, the protective film is removed by wet etching, and then, the photoresist pattern is removed. |
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Bibliography: | Application Number: US201815934710 |