POWER SEMICONDUCTOR DEVICE

A protective diffusion region includes a first protective diffusion region at a location closest to a termination region, and a second protective diffusion region located away from the first protective diffusion region with a first space therebetween. A second space that is a distance between a term...

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Bibliographic Details
Main Authors KAGAWA, Yasuhiro, SUGAWARA, Katsutoshi, TANAKA, Rina, FUKUI, Yutaka
Format Patent
LanguageEnglish
Published 13.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A protective diffusion region includes a first protective diffusion region at a location closest to a termination region, and a second protective diffusion region located away from the first protective diffusion region with a first space therebetween. A second space that is a distance between a termination diffusion region and the first protective diffusion region is greater than the first space. A current diffusion layer of a first conductivity type includes a first current diffusion layer located between the first protective diffusion region and the second protective diffusion region and having a higher impurity concentration than a drift layer, and a second current diffusion layer located between the first protective diffusion region and the termination diffusion region. The second current diffusion layer includes a region having a lower impurity concentration than the current diffusion layer.
Bibliography:Application Number: US201615569636