SEMICONDUCTOR STRUCTURES INCLUDING DIELECTRIC MATERIALS HAVING DIFFERING REMOVAL RATES
Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extendin...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
22.11.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures. |
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Bibliography: | Application Number: US201816052123 |