INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additio...

Full description

Saved in:
Bibliographic Details
Main Authors VAN KESSEL, Theodore G, LIFSON, Max L, WOLF, Randy L, SLINKMAN, James A, BOTULA, Alan B
Format Patent
LanguageEnglish
Published 11.10.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
Bibliography:Application Number: US201816009561