WRAP-AROUND GATE STRUCTURES AND METHODS OF FORMING WRAP-AROUND GATE STRUCTURES

A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel struct...

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Bibliographic Details
Main Authors Azzazy, Farid, Vedula, Ravi Pramod Kumar, Fanelli, Stephen Alan
Format Patent
LanguageEnglish
Published 16.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.
Bibliography:Application Number: US201815879109