Integrated Bi-Layer STI Deposition

• Main Authors: Tsai, Shin-Yeu, Wang, Kuan-Cheng, Hsiaw, Han-Ti, Hsu, Tsung Han
• Format: Patent
• Language: English
• Published: 09.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielect...