SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME

A semiconductor structure is provided. The semiconductor structure includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide layer, a plurality of semiconductor devices formed in the second substrate, and a plurality of trenches formed in the se...

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Bibliographic Details
Main Authors WU, Shih-Kai, WANG, Cheng-Yu
Format Patent
LanguageEnglish
Published 17.05.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure is provided. The semiconductor structure includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide layer, a plurality of semiconductor devices formed in the second substrate, and a plurality of trenches formed in the second substrate and filled with an insulation material, wherein the trenches are separated from each other and one of the trenches surrounds one of the semiconductor devices. A method for fabricating a semiconductor structure is also provided.
Bibliography:Application Number: US201615352125