BORANE MEDIATED DEHYDROGENATION PROCESS FROM SILANE AND ALKYLSILANE SPECIES FOR SPACER AND HARDMASK APPLICATION

• Main Authors: CHENG Rui, JHA Praket P, GADRE Milind, PADHI Deenesh, MALLICK Abhijit Basu, DUAN Ziqing
• Format: Patent
• Language: English
• Published: 15.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate and selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer.